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班士良

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班士良

教授,博士生导师

内蒙古大学物理科学与技术学院

呼和浩特 010021

电话:0471-4992237

Email: slban@imu.edu.cn

  

个人简历

一、受教育 情况

1978.3-1981.12 内蒙古大学物理学专业学士学位

1982.3-1985.12 内蒙古大学理论物理专业硕士学位

1996.9-1999.7 内蒙古大学理论物理专业博士学位

二、工作经历

1985.12 –现在  内蒙古大学物理系 讲师(1987),副教授(1992),教授(1995)

1988.9-1989.9 加拿大舍布鲁克大学物理系访问学者

1997.8-1998.8 美国西佐治亚州立大学物理系访问学者

教学

一、曾经主讲的课程

本科生“力学”,“微机数值计算”,“热力学与统计物理”

研究生“高等量子力学”

二、曾经主持完成的主要教学项目

1.      国家自然科学基金 国家基础科学人才培养基金资助项目,起止时间:20011-200512

2.      国家自然科学基金 内蒙古大学数学物理学基地,起止时间:20081-201012

3.      国家自然科学基金 内蒙古大学数学物理学基地可持续发展条件建设,起止时间:20121-201512

三、目前承担的教学任务

本科生统计热力学(秋季学期)

研究生固体理论(秋季学期)

培养研究生情况

截止2016年已协助指导毕业博士2人,指导毕业博士7人,毕业硕士20人。

现有在读博士研究生5人,与物理所韩秀峰教授合作培养博士研究生1,硕士研究生7人;每年拟招博士生1人,硕士生2人。

研究领域

一、研究方向

凝聚态物理,半导体物理

二、主持完成的主要科研项目

1. 国家教委资助优秀年轻教师基金项目 单异质结半导体界面声子对极化子、激子性质的影响 起止时间:19951-199712

2. 教育部高等学校骨干教师资助项目 层状半导体材料的量子隧穿问题 起止时间:20001-200112

3. 国家自然科学基金 压力下半导体异质结构中电子-声子相互作用及相关问题 起止时间:20021-200412

4. 内蒙古自治区优秀学科带头人计划项目 半导体异质结构中电子态的压力效应 起止时间:20046-200612

5. 国家自然科学基金 压力下电子-声子相互作用对半导体异质结构中电子输运性质的影响 起止时间:20061-200812

6. 国家自然科学基金应变及压力调制下半导体多层异质结构材料中的电子态,起止时间:20101- 201212

三、目前的主要研究方向

1半导体异质结构和纳米材料中电子态和载流子输运等性质及其电子声子相互作用等问题

2. 新型薄膜太阳电池及材料的研制、机理分析和应用研究

四、目前主持的主要科研项目

1. 国家自然科学基金 纤锌矿三元混晶多层异质材料中电-声子相互作用及其相关问题 起止时间:20131- 201612

2. 内蒙古日月太阳能科技有限责任公司合作协作项目 2009年起

3. 2015年自治区科技创新引导奖励资金项目 新型高效铜基中间带太阳电池和N型单晶硅双面太阳电池(N-PERT)的研制与产业化 起止时间:20156-2017.12

奖励、荣誉和学术兼职

一、获奖和荣誉

1.      1996 , 获国务院政府特殊津贴

2.      1998, 入选自治区“321人才工程第一层次人选

3.      1998, 异质结构材料中电子与声子作用及相关问题的理论研究,内蒙古自治区科技进步三等奖

4.      2001, 入选自治区高等教育“111工程第一层次人选

5.      2002, 入选自治区新世纪321人才工程第一层次人选

6.      2002, 被教育部授予高等学校优秀骨干教师

7.      2002, 被授予内蒙古自治区有突出贡献中青年专家称号

8.      2003, 被自治区党委、政府授予优秀留学回国人员称号

9.      2003, 被评为自治区十佳优秀青年学科带头人

10.  2005 , 获宝钢优秀教师奖并被评为自治区劳动模范(先进工作者)

11.  2005,“热物理”系列课程教学改革与建设,内蒙古自治区教学成果二等奖

12.  2008, 获自治区高等学校教学名师奖

13.  2009, 压力下半导体异质结构中电子声子相互作用及相关问题,内蒙古自治区(首届)自然科学奖三等奖(2007年度)

14.  2009, 国家精品课程《统计热力学》改革与建设,内蒙古自治区教学成果一等奖

15.  2009, 数理科学创新型基础人才培养与数理学基地建设,内蒙古自治区教学成果二等奖

16.  2014, 创新知识体系的热物理理论和通识课程改革实践与开放共享,国家级教学成果二等奖

二、主要学术兼职

1.      教育部高等学校物理学类专业教学指导分委员会委员(2006-2010

2.      中国物理学会教学委员会委员(2003.12-2011

3.      中国物理学会半导体物理专业委员会委员(2005.10-2011

4.      中国物理学会理事(2003.10-

5.      全国热力学与统计物理教学研究会秘书长(2004.8-

6.      内蒙古物理学会理事长(2001-

7.      内蒙古自治区高等学校半导体光伏技术重点实验室主任(2009.6-

8.      内蒙古自治区半导体光伏技术重点实验室主任(2011.3-

9.      教育部高等学校物理学类专业教学指导委员会副主任委员(2013.4-2017.12

10.  中国可再生能源学会光电专业委员会第九届委员会委员(2014.11-2019)

11.  内蒙古大学第九届学术委员会主任(2014.11-)

中国学位与研究生教育学会第五届文理科工作委员会副主任委员(2014.12- 2017)

主要论著

1. X. J. Zhou, Z. Gu, S. L.Ban, Z. P. Wang, Electronic mobility limited by optical phonons in Al2O3/AlGaN/GaN double heterojunctions

Journal of Applied Physics, 120, 125706-1-5(2016.09)    

2. P. Liu, Z. H..Yuan, H.Wu, S. S. Ali,C. H. Wan, S. L. .Ban, Nonlocal ordinary magnetoresistance in indium arsenide Journal of Magnetism and Magnetic Materials,385,292-294(2015.3)

3. Wen-Hao Liu, S. Yang, H.M. Feng, L. Yang, Y. Qu*, S. L. Ban, Effects of ternary mixed crystal and size on intersubband optical absorption in wurtzite InGaN/GaN core-shell nanowires Superlattices and Microstructures,83,521–529 (2015.4)

4. Z. Y. Feng*, S. L. Ban, J. Zhu, Binding energies of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions with finitely thick potential barriers, Chin. Phys. B 23(6) 066801-1~6 (2014.06)

5. 谷卓,班士良*,纤锌矿ZnO/MgxZn1-xO量子阱中带间光吸收的尺寸和三元混晶效应,物理学报, 63(10), 107301~1-6(2014.05)

6.  J. Li, J. Y. Guan, S. F. Zhang, S. L. Ban, Y. Qu*,Effects of ternary mixed crystal and size on optical phonons in wurtzite nitride core-shell nanowires, J. Appl. Phys. 115, 154305~1-8 (2014.04)

7. 屈媛, 宗易昕, 马健, 李冬雪, 班士良*,体横光学声子双模性对纤锌矿AlxGa1-xN量子阱中光学声子的影响,中国科学: 物理学 力学 天文学,44(2),150-161(2014.01)

8. F. J. Yang, S. L. Ban, Acoustic phonon scattering on the two dimensional electron gas in wurtzite AlxGa1-xN/GaN/AlyGa1-yN double heterostructures, Solid State Communications 161,5–8 (2013)

9.  J. Zhu , S. L. Ban, S. H. Ha, A simulation of intersubband absorption in ZnO/MgxZn1-xO quantum wells with an external electric field, Superlattices and Microstructures,56,92-98(2013.03)

10.  J. Zhu, S. L. Ban, S. H. Ha,Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells,Chinese Physics B, 21(9), 097301-1~6(2012.09)

11.  J. G. Zhu and S. L. Ban, Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells, Eur. Phys. J. B, 85,140-1~6(2012.04)

12.  杨福军, 班士良, 纤锌矿AlGaN/AlN/GaN异质结构中光学声子散射影响的电子迁移率, 物理学报,61(8),087201-1~11(2012.04)

13.  朱金广, 班士良, 三元混晶双势垒结构中光学声子辅助共振隧穿及压力效应, 中国科学:物理学 力学  天文学, 42(4),369-376(2012.4)

14.  J. Zhu, S. L. Ban, S. H. Ha,Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells, Eur. Phys. J. B, 85(2)67-1~6(2012.2)

15.  J. Zhu, S. L. Ban, S. H. Ha, Intersubband absorption in strained AlxGa1-xN/GaN quantum wells with InyGa1-yN nanogroove layers, Superlattices and Microstructures, 51(4),471-479,(2012.4)

16.  S. H. Ha, S. L. Ban, J. Zhu,  Intersubband absorption in strained AlGaN/GaN double quantum wells, Physica B, 406, 3640-3645(2011.10)

17.  Y. Qu  and S. L. Ban,Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove, J. Appl. Phys. 110, 013722-1~7(2011.7)

18.  S. H. Ha,S. L. Ban and J. Zhu,Screened excitons in strained wurtzite AlxGa1−xN/GaN/AlyGa1−yN quantum wells, Phys. Status. Solidi C, 8(1)34-37(2011.1)

19.  J. Zhu, S. L. Ban, and S. H. Ha, Binding Energies of Excitons in Strained [0001]-oriented Wurtzite AlGaN/GaN double quantum wells, Phys. Status. Solidi B, 248(2),384-388(2011.2)

20.  屈媛, 班士良,纤锌矿氮化物量子阱中光学声子模的三元混晶效应,物理学报,59(7),4864-4873(2010.07)

21.  M. Zhang and S.L. Ban, Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions, Chinese Physics B, 18(12), 5437-5442(2009.12)

22.  M. Zhang and S.L. Ban, Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction, Chinese Physics B, 18(10), 4449-4455(2009.10)

23.  Y. Qu and S. L. Ban,Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect, Eur. Phys. J. B 69,321-329(2009.6)

24.  G. J. Zhao, X.. X. Liang and S. L. Ban, Polaron effect on the binding energies of excitons in quantum wells under hydrostatic pressure, Physica Status Solidi C, 6(1), 185-188 (2009)

25.  X. P. Bai and S. L. Ban, Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdxSe strained heterojunction,Chinese Physics, 17(12), 4606-4613(2008.12)

26.  J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted magneto tunneling in a parabolic quantum well with double barriers, Physica E, 40(8), 2664-2670(2008)

27.  S. H. Ha and S. L. Ban,Binding energies of excitons in a strained wurtzite GaN/AlGaN quantum well influenced by screening and hydrostatic pressure, J. Phys.: Condens. Matter, 20, 085218 (7 Pages) (2008.02)

28.  X. M. Jia and S. L. Ban, Optical phonon influence on the mobility of electrons in wurtzite and zincblende AlN/GaN quantum wells, J. Physics: Conference Series, 92, 012065 (4 Pages) (2007.12)

29.  G. D. Hao, S. L. Ban and X. M. Jia, Pressure effect on the mobility of electrons in AlAs/GaAs quantum wells, Chinese Physics, 16(12), 3766-3771(2007.12)

30.  J. Gong, X. X. Liang and  S. L. Ban, Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure, J. Appl. Phys. ,102(7), 073718, Page1-6(2007.10)

31.  X. P. Bai and S. L. Ban, Electron mobility in a realistic AlxGa1-xAs/GaAs heterojunction potential under pressure, Eur. Phys. J., B 58, 31-36 (2007.08)

32.  G. J. Zhao, X.. X. Liang and S. L. Ban, Effect of hydrostatic pressure on the binding energies of excitons in quantum wells, International Journal of Modern Physics B ,21(16), 2735-2747(2007.07)

33.  J. Gong, X. X. Liang, and S. L. Ban, Tunneling time of electronic wave packet through a parabolic quantum well with double barriers, Phys. Status Solidi (b), 244(6), 2064-2071(2007.06)

34.  S. H. Ha and S. L. Ban, Screening influence on the binding energies of excitons in quantum wells under pressure, AIP Conference Proceedings, 893, 273-274 (2007.06)

35.  Z. W. Yan, S. L. Ban and X. X. Liang, Polaron properties in ternary group-III nitride mixed crystals, AIP Conf. Proc. ,850,1546-1547,Part.A-B(2006)

36.  X. L.Yu, S.L.Ban, Cyclotron resonance of a polaron in a realistic heterojunction and its pressure effect, Eur. Phys. J. B ,52(4), 483-491(2006.08)

37.  J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted tunneling in a parabolic quantum well with double barriers, J. Appl. Phys.,100(2), 023707, Pages.1-6,(2006.7)

38.  Z. Z. Guo, X. X. Liang and S. L. Ban, Interface excitons in a type-Ⅱ ZnSe/ZnTe heterojunction under hydrostatic pressure: the triangle potential well approximation, Physica Scripta, 73(2),137-142(2006.2)

39.  Z. W. Yan, X. X. Liang and S. L. Ban, Intermediate-coupling poltarons in GaN, AlN, and InN,     AIP Conference Proceedings, 772, 233-234 (2005)

40.  S. L. Ban and S. T. Wang, Magnetic field effect on bound polarons in semiconductor heterojunctions under pressure, AIP Conference Proceedings, 772, 391-392 (2005)

41.  J. Gong, X. X. Liang and  S. L. Ban, Resonant tunneling in parabolic quantum well structures under a uniform transverse magnetic field,    Chinese Physics, 14(1), 201-207(2005)

42.  Z. W. Yan, S. L. Ban and X. X. Liang, Intermediate-coupling polaron properties in wurtzite nitride semiconductors, Physics Letters A,326,157-165(2004)

43.  X. X. Liang and S. L. Ban, Optical vibration modes and electron-phonon interaction in ternary mixed crystals of polar semiconductors,Chinese Physics,13(1),71-81( 2004.01)

44.  Z. W. Yan, S. L. Ban and X. X. Liang, Pressure dependence of electron- IO- phonon interaction in multi-interface heterostructure systems, Int. J. of Modern Physics B, 17(31&32), 6085-6096 (2003. 03)

45.  Z. W. Yan, S. L. Ban and  X. X. Liang, Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure, Eur. Phys. J. B 35, 41-47(2003)

46.  G. J. Zhao, X. X. Liang and S. L. Ban, Binding energies of donors in quantum wells under hydrostatic pressure, Physics Letters A 319,191-197(2003)

47.  Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure effect on the interface excitons in a type-Ⅱ ZnTe/CdSe heterojunction, Modern Phys. Lett. B,17 (27-28), 1425-1435 (2003)

48.  F. Q. Zhao, X. X. Liang and S. L. Ban, Influence of the spatially dependent effective mass on bound polarons in finite parabolic quantum wells, Eur. Phys. J.B 33(1),3-8(2003)

49.  Y. L. Cao, S. L. Ban and G. J. Zhao, The effect of Hydrostatic pressure on bound polarons in polar semiconductor heterojunctions, Modern Physics Letters B, 17(17), 909-919 (2003)

50.  G. J. Zhao, X. X. Liang and S. L. Ban, Binding energies of excitons in GaAs/AlAs quantum wells under pressure, Modern Physics Letters B, 17(16), 863-870(2003)

51.  Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure-induced increase of exciton-LO-phonon coupling in a Zn1-xCdxSe/ZnSe quantum well, Phys. Stat. Sol (b)238, 173-179 (2003)

52.  Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure tuning of strains in Zn1-xCdxSe/ZnSe (x<0.1) single quantum wells, Phys. Lett. A, 306, 160-165(2002)

53.  J. Gong, S. L. Ban and X. X. Liang, Resonant tunneling in semiconductor multibarrier heterostructures, Int. J. of Modern Physics B, 16(30), 4607-4619 (2002)

54.  X. X. Liang and S. L. Ban, Note to electron-phonon interaction in polar ternary mixed crystals, Journal of Luminescence 94-95, 781-785(2001)

55.  F. Q. Zhao, X. X. Liang and S. L. Ban, Energy levels of a polaron in a finite parabolic quantum well, I.J.M.Phys B 15(5),527-535 (2001)

56.  Z. W. Yan, X. X. Liang and S. L. Ban, IO-phonon-assisted tunneling in asymmetric double-barrier structures, Phys Rev B64(12),125321(2001)

57.  41、X. X. Liang, Z .P. Wang and S. L. Ban, Bound polarons in ternary mixed crystals, Journal of Luminescence, 87-89,614-616(2000)

58.  S. L. Ban, J. E. Hasbun and X.X. Liang, A novel method for quantum transmission across arbitrary potential barriers, Journal of Luminescence, 87-89,369-371(2000)

59.  S. L. Ban and J. E. Hasbun, Bound polarons in a polar semiconductor heterojunction, Phys. Rev. B 59,3,2276-2283(1999)

60.  S. L. Ban and J.E.Hasbun, Donor level in a quasi- two dimensional heterojunction system, Solid State Commun. ,109,93-98(1999)

61.  S. L. Ban and J. E. Hasbun, Interface polarons in a realistic heterojunction potential, Eur. Phys. J B8,453-461(1999)

62.  J. E. Hasbun and S. L. Ban, Optical-phonon scattering in quasi-two-dimensional heterojunction systems, Phys. Rev., B58( 4), 2102(1998) 

63.  S. L. Ban and X. X. Liang, Interface polarons in a heterojunction with triangular bending-band, Eur. Phys. J., B5, 153-158(1998)

64.  X. X. Liang, S. L. Ban and R. S. Zheng, Effect of optical phonons on the binding energy of an exciton in a quantum well, J. Luminescence, 72-74, 358(1997)

65.  S. L. Ban, X. X. Liang and R. S. Zheng, Cyclotron resonance of two-dimensional interface polarons, Phys. Rev. B51,2351(1995)

66.  G. H. Yun, J. H. Yan, S. L. Ban and X. X. Liang, Properties of perfect confined modes and interface modes of spin- waves in a ferromagnetic bilayer system, Surf. Sci. ,318,177(1994)

67.  S. L. Ban, X. X. Liang and R. S. Zheng, Influence of interface phonons on a polaron near a polar semiconductive heterointerface, Phys. Lett A, 192, 110(1994)

68.  R. S. Zheng, S. L. Ban and X. X. Liang, Polaronic effect on the electron energy spectrum in a quantum well, J Phys. CM6,10307(1994)

69.  R. S. Zheng, S. L. Ban and X. X. Liang, Effect of the interface and bulk optical phonons on the polarons in a quantum well, Phys. Rev. B49,1796(1994)

70.  S. L. Ban, R. S. Zheng, X. M. Meng and L. Y. Zhao, Temperature dependence of the N-dimensional polaron, J Phys. CM5,6055(1993)

71.  G. H. Yun, J. H. Yan and S. L. Ban, Interface-rescaling approach to the exact solutions of quantum low -energy for a ferromagnetic bilayer system, Phys. Rev.B46, 18, 12045(1992)

S. W. Gu and S. L. Ban, The ground state effective Hamiltonian of the strong coupling One- dimensional optical exciton, Phys. Stat. Sol.(b), 122, K41(1984)

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