主要论著
1. X. D.Lv, F. Y.Li, J.Gong*,Z. F.Chen,The dimensional and hydrogenating effect on the electronic properties of ZnSe nanomaterials: a computational investigation,Physical Chemistry Chemical Physics,20(37)24453-24464(2018)
2. S. L.Su,J. Gong*, Z. Q.Fan,Tunnable rectifying performance of in-plane metal-semiconductor junctions based on passivated zigzag phosphorene nanoribbons,RSC Advance 8(55)31255-31260(2018)
3. J. Lu , Z. Q. Fan, J. Gong*, et al. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects, Physical Chemistry Chemical Physics, 20,5699(2018).
4. J. Chen, J. Gong*, Theoretical investigation of the phonon-assisted tunneling in TFET with an indirect band gap semiconductor , Superlattices and Microstructures, 111, 319-325(2017).
5. J. Lu, Z. Q. Fan, J. Gong* and X. W. Jiang, Ab initio performance predictions of single-layer In-V tunnel field-effect transistors , Physical Chemistry Chemical Physics, 19, 20121-20126 (2017).
6. J. Lu, Z. Q. Fan, J. Gong* and X. W. Jiang, Ab initio simulation study of defect assisted Zener tunneling in GaAs diode , Aip Advances, 7, 065302 (2017).
7. X. W. Jiang, J. Lu, J. W. Luo, S. S. Li, J. Gong and L. W. Wang, Ab initio simulation on mono-layer MoS2 tunnel FET: Impact of metal contact configuration and defect assisted tunneling, IEEE International Conference on Solid-State and Integrated Circuit Technology IEEE, 486-488 (2016).
8. X. W. Jiang, J. Gong, N. Xu, S. S. Li, J. F. Zhang, Y. Hao, and L. W. Wang, Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects, Applied Physics Letters, 104, 023512 (2014).
9. M. Li, J. Chen, and J. Gong*, Dwell time and escape tunneling in InAs/InP cylindrical quantum wire, Acta Phys. Sin., 63, 237303 (2014).
10.R. Q. Wang, J. Gong*, J. Y. Wu and J. Chen, Time of spin-polarized tunneling through a symmetric double-barrier quantum well structure , Acta Physica Sinca, 62,087303 (2013).
11. H. D. Yue, Y. Zhang, J. Gong*, Quantum discord in three-spin XXZ chain with three-spin interaction[J],SCIENCE CHINA Physics, Mechanics & Astronomy,55(9),1641-1645 (2012).
12. Y. Ming, J. Gong* and R. Q. Zhang, Spin- polarized transport through ZnMnSe/ ZnSe/ ZnBeSe heterostructures , Journal of Applied Physics, 110, 093717 (2011).
13.H. Li, J. Gong, X. Hu and R. Q. Zhang, Barrier dependent electron tunneling lifetime in one-dimensional device structures [J], Journal of Applied Physics, 108, 104514 (2010).
14. J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted magnetotunneling in a parabolic quantum well with double barriers [J], Physica E, 40(8), 2664-2670 (2008).
15.J. Gong, X. X. Liang and S. L. Ban, Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure [J], Journal of Applied Physics, 102(7), 073718 (2007).
16.J. Gong, X. X. Liang and S. L. Ban, Tunneling time of electronic wave packet through a parabolic quantum well with double barrier [J], Physica Status Solidi (b), 244(6), 2064-2071 (2007).
17.J. Gong, F. H. Yang and S. L. Feng, Coherent tunneling in coupled quantum wells under a uniform magnetic field [J], Chinese Physics Letters, 24(8), 2383 (2007).
18.J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon assisted tunneling in a parabolic quantum well with double barriers [J], Journal of Applied Physics, 100(2), 023707 (2006).