主要论著
[1]J. Lyu, J. Pei, Y. Z. Guo, J. Gong, H. L. Li.*Anewopportunity for 2D van der Waalsheterostructures:makingsteep‐slopetransistors.Advanced Materials, 2020, 32(2), 1906000.
[2]J.Lyu,J. Gong,*H. L. Li.*Harnessing defects for high-performance MoS2tunneling field-effect transistors.Materials Research Letters, 2023, 11(4), 266.
[3] S. Lang,S. Song,J. Lyu*,J. Gong*, Device Transport Characteristics of Monolayer SnS2and HfS2Field-Effect Transistors with Semimetal Contacts, J. Phys. Chem. C, 2024, 128(34), 14458-14468.
[4]J. Lyu, S. Song, J. Gong*, Bi2O2Se/Xene for Steep-Slope Transistors, ACS Appl. Electron. Mater., 2023, 5(8), 4248-4253.
[5] L. He, S. Lang, W. Zhang, S. Song,J. Lyu*,J. Gong*, First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor, Nanomaterials, 2024, 14(7), 612.
[6] R. Y. Wang,J.Lyu,*J. Gong.*Strain Benefits ofmonolayerα-GeTe and itsapplication inlow-powermetal-oxide-semiconductorfield-effecttransistors.Physica Status Solidi-Rapid Research Letters,2022, 16(11),2200174
[7]J.Lyu,J. Gong.*Simulation of asteep-slope p- and n-type HfS2/MoTe2field-effecttransistor with thehybridtransportmechanism.Nanomaterials, 2023, 13(4), 649.
[8] S. Wang, K. Shi,J. Li,J. Lyu*, F. Li*, First-principles explorations on 2D transition metal diborides featuring inverse sandwich structures and their gas sensing properties, J. Phys. D: Appl. Phys., 2024, 57(42), 425301.
[9]J.Lu,Z. Q. Fan*, J. Gong*, J. Z. Chen, M. D. Huhe, Y. Y. Zhang, S. Y. Yang, X.W. Jiang, Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.Physical Chemistry Chemical Physics, 2018, 20(8),5699.
[10]J.Lu,Z. Q. Fan*, J. Gong*, X.W. Jiang, Ab initio performance predictions of single-layer In-V tunnel field-effect transistors. Physical Chemistry Chemical Physics, 2017, 19(30),20121.
[11]J.Lu,Z. Q. Fan, J. Gong*, X.W. Jiang*, Ab initio simulation study of defect assisted Zener tunneling in GaAs diode. Aip Advances, 2017, 7(6), 065302.
[12] X.W. Jiang*,J.Lu, Jian Gong, et al. ab initio simulation on mono-layer MoS2tunnel FET: Impact of metal contact configuration and defect assisted tunneling, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, P.R. China, 2016.10.25-10.28.
[13] Z. Y. Jin,J. Lu, H. L. Jia, W. H. Liu, H. L. Li,*Z. h. Chen, X. Lin, G. Q. Xie, X. J. Liu,*S. H. Sun, and H. J. Qiu.*Nanoporous Al‐Ni‐Co‐Ir‐Mo High‐Entropy Alloy for Record‐High Water Splitting Activity in Acidic Environments.Small, 2019, 15(47), 1904180.
[14] Z. Y. Jin,J.Lyu, K.L.Hu, Z. H. Chen, G. Q. Xie, X. J. Liu, X. Lin, H.J. Qiu.*Eight-Component Nanoporous High-Entropy Oxides with Low Ru Contents as High-Performance Bifunctional Catalysts in Zn-Air Batteries.Small, 2022, 2107207.
[15] Z. Y. Jin,J.Lyu,Y. L. Zhao*,H. L. Li*,Z. H. Chen, X. L, G. Q. Xie, X. J. Liu, J. J. Kai, H. J. Qiu.*Top-downSynthesis ofNobleMetalParticles onHigh-EntropyOxideSupports forElectrocatalysis.Chemistry of materials,2021,202133(5), 1771.
[16] Z. Y. Jin,J.Lyu,Y. L. Zhao, H. L. Li,*X. Lin, G. Q. Xie, X. J. Liu, J. J. Kai, H. J. Qiu.*Rugged high-entropy alloy nanowires with in situ formed surface spinel oxide as highly stable electrocatalyst in Zn-air batteries.ACS Materials Letters,2020, 2(12), 1698.
[17] Z. Y. Zhang,T. R. Li,Y. J. Wu,Y. J. Jia,C. W. Tan,X. T. Xu,G. R. Wang,J.Lv,W. Zhang*,Y. H. He,J. Pei,C. Ma,G. Q. Li,H. Z. Xu,L. P. Shi*,H. L. Peng*,H. L. Li*,Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2O2Se-Based Three-Terminal Memristor, Advanced materials, 2019, 31(3),e1805769.
[18] P. Du, K. L. Hu,J.Lyu, H. L. Li,*X. Lin, G. Q. Xie, X. J. Liu, Y. Itob,*, H.J. Qiu,*Anchoring Mo single atoms/clusters and N on edge-rich nanoporous holeygraphene as bifunctional air electrode in Zn−air batteries,Applied Catalysis B: Environmental, 2020, 276(5), 119172.