学院师资

师资队伍

教职工信息

姓名:吕娟

地址:内蒙古大学 物理科学与技术学院主楼137

邮箱:lvjuan@semi.ac.cn

邮编:呼和浩特市大学西路235号010021

职称:副教授

研究方向:原子尺度的材料计算和纳米尺度的器件电输运模拟;基于低维材料的新型低功耗高性能电子器件设计和输运机理研究

个人简历

教育情况

2013.09-2018.06内蒙古大学物理科学与技术学院物理学专业博士

工作经历

2018.08-2020.09 清华大学精密仪器系博士后

2020.10-今 内蒙古大学 物理科学与技术学院 副教授硕士生导师

教学

《统计热力学》、《大学物理》、《大学物理实验》

培养研究生情况

每年计划招收研究生1-2名

研究领域

计算凝聚态物理

研究方向:原子尺度的材料计算和纳米尺度的器件电输运模拟;基于低维材料的新型低功耗高性能电子器件设计和输运机理研究。

主持的科研项目:

1. 国家自然科学基金青年科学基金项目

2. 内蒙古自治区高等学校青年科技英才支持项目

奖励、荣誉和学术兼职

更新中

主要论著

[1]J. Lyu, J. Pei, Y. Z. Guo, J. Gong, H. L. Li.*Anewopportunity for 2D van der Waalsheterostructures:makingsteep‐slopetransistors.Advanced Materials, 2020, 32(2), 1906000.

[2]J.Lyu,J. Gong,*H. L. Li.*Harnessing defects for high-performance MoS2tunneling field-effect transistors.Materials Research Letters, 2023, 11(4), 266.

[3] S. Lang,S. Song,J. Lyu*,J. Gong*, Device Transport Characteristics of Monolayer SnS2and HfS2Field-Effect Transistors with Semimetal Contacts, J. Phys. Chem. C, 2024, 128(34), 14458-14468.

[4]J. Lyu, S. Song, J. Gong*, Bi2O2Se/Xene for Steep-Slope Transistors, ACS Appl. Electron. Mater., 2023, 5(8), 4248-4253.

[5] L. He, S. Lang, W. Zhang, S. Song,J. Lyu*,J. Gong*, First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor, Nanomaterials, 2024, 14(7), 612.

[6] R. Y. Wang,J.Lyu,*J. Gong.*Strain Benefits ofmonolayerα-GeTe and itsapplication inlow-powermetal-oxide-semiconductorfield-effecttransistors.Physica Status Solidi-Rapid Research Letters,2022, 16(11),2200174

[7]J.Lyu,J. Gong.*Simulation of asteep-slope p- and n-type HfS2/MoTe2field-effecttransistor with thehybridtransportmechanism.Nanomaterials, 2023, 13(4), 649.

[8] S. Wang, K. Shi,J. Li,J. Lyu*, F. Li*, First-principles explorations on 2D transition metal diborides featuring inverse sandwich structures and their gas sensing properties, J. Phys. D: Appl. Phys., 2024, 57(42), 425301.

[9]J.Lu,Z. Q. Fan*, J. Gong*, J. Z. Chen, M. D. Huhe, Y. Y. Zhang, S. Y. Yang, X.W. Jiang, Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.Physical Chemistry Chemical Physics, 2018, 20(8),5699.

[10]J.Lu,Z. Q. Fan*, J. Gong*, X.W. Jiang, Ab initio performance predictions of single-layer In-V tunnel field-effect transistors. Physical Chemistry Chemical Physics, 2017, 19(30),20121.

[11]J.Lu,Z. Q. Fan, J. Gong*, X.W. Jiang*, Ab initio simulation study of defect assisted Zener tunneling in GaAs diode. Aip Advances, 2017, 7(6), 065302.

[12] X.W. Jiang*,J.Lu, Jian Gong, et al. ab initio simulation on mono-layer MoS2tunnel FET: Impact of metal contact configuration and defect assisted tunneling, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, P.R. China, 2016.10.25-10.28.

[13] Z. Y. Jin,J. Lu, H. L. Jia, W. H. Liu, H. L. Li,*Z. h. Chen, X. Lin, G. Q. Xie, X. J. Liu,*S. H. Sun, and H. J. Qiu.*Nanoporous Al‐Ni‐Co‐Ir‐Mo High‐Entropy Alloy for Record‐High Water Splitting Activity in Acidic Environments.Small, 2019, 15(47), 1904180.

[14] Z. Y. Jin,J.Lyu, K.L.Hu, Z. H. Chen, G. Q. Xie, X. J. Liu, X. Lin, H.J. Qiu.*Eight-Component Nanoporous High-Entropy Oxides with Low Ru Contents as High-Performance Bifunctional Catalysts in Zn-Air Batteries.Small, 2022, 2107207.

[15] Z. Y. Jin,J.Lyu,Y. L. Zhao*,H. L. Li*,Z. H. Chen, X. L, G. Q. Xie, X. J. Liu, J. J. Kai, H. J. Qiu.*Top-downSynthesis ofNobleMetalParticles onHigh-EntropyOxideSupports forElectrocatalysis.Chemistry of materials,2021,202133(5), 1771.

[16] Z. Y. Jin,J.Lyu,Y. L. Zhao, H. L. Li,*X. Lin, G. Q. Xie, X. J. Liu, J. J. Kai, H. J. Qiu.*Rugged high-entropy alloy nanowires with in situ formed surface spinel oxide as highly stable electrocatalyst in Zn-air batteries.ACS Materials Letters,2020, 2(12), 1698.

[17] Z. Y. Zhang,T. R. Li,Y. J. Wu,Y. J. Jia,C. W. Tan,X. T. Xu,G. R. Wang,J.Lv,W. Zhang*,Y. H. He,J. Pei,C. Ma,G. Q. Li,H. Z. Xu,L. P. Shi*,H. L. Peng*,H. L. Li*,Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2O2Se-Based Three-Terminal Memristor, Advanced materials, 2019, 31(3),e1805769.

[18] P. Du, K. L. Hu,J.Lyu, H. L. Li,*X. Lin, G. Q. Xie, X. J. Liu, Y. Itob,*, H.J. Qiu,*Anchoring Mo single atoms/clusters and N on edge-rich nanoporous holeygraphene as bifunctional air electrode in Zn−air batteries,Applied Catalysis B: Environmental, 2020, 276(5), 119172.