主要论著
67. Y. X. Zhang, W. T. Lin, H. S. Zhang, J. Lyu, J. Gong, S. Q. Guo*. Spin orbit coupling modulated tunneling magnetoresistance in MnBr2-based antiferromagnetic magnetic tunnel junctions. Physica B: Condensed Matter, 724, 418204(2026).
66. S. Lang, W. Zhang, S. Song, S. Q. Guo, H. S. Zhang, J. Lyu*, J. Gong*. High-Performance Monolayer 1T-GeO2 Transistors with Low-Resistance Metal Contacts. Advanced Electronic Materials, 11(19), e00407(2025).
65. S. Lang, S. Q. Guo, H. S. Zhang, J. Lyu*, J. Gong*. Monolayer BX (X = P, As, Sb): Emerging High-Performance Channel Materials for Advanced Transistors. Advanced Electronic Materials, 11(18), e00220(2025).
64. J. Lyu*, S. Lang, N. Dong, S. Song, J. Gong*, H. L. Li*. Resistive switching properties of monolayer 1T-HfO2 atomristors with different metal electrodes. Physical Review Applied, 23, 044035(2025).
63. K. Shi, S. Lang, S. Song, S. Q. Guo, H. S. Zhang, J. Lyu*, J. Gong*. Thermionic emission-dominated sub-60 mV dec-1 operation in BSb/CNT van der Waals heterostructure transistors. New Journal of Physics, 27(9), 093503(2025).
62. L. Qin, J. Lyu, S. Y. Yang*, S. Song*, J. Gong*. Engineering SnSe Isolated State Steep-Slope MOSFETs for High-Performance Applications. Advanced Electronic Materials, 11(20), e00573(2025).
61. F. J. Kang, S. S. Liu, J. J. Kang, Z. Peng, S. Q. Guo, J. Lyu, H. S. Zhang*, J. Gong*. Sulfur Passivation Engineering of Carbon Defects in N-Surface GaN: Suppressing Nonadiabatic Carrier Recombination Via Self-Compensated SN-CN Complexes. The Journal of Physical Chemistry Letters, 16(24), 5938-5945(2025).
60. S. Su, X, Lv*, J. Gong*, Z. Fan*. Ultrasensitive and Selective ZPNRs-H Sensor for Sulfur Gas Molecules Detection. Nanomaterials, 15(16), 1273(2025).
59. X. Lv, T. Han, R. Liu, F. Li*, J. Gong*, Z. Chen*. High-throughput Theoretical Exploration of Multifunctional Planar MBenes: Magnetism, Topology, Superconductivity, and Anode Applications. Advanced Powder Materials, 4(3), 100297(2025).
58. Surila, X. Lv*, S. Su, B. Zhang, J. Gong*. Doping at sp2-Site in Graphene+ Monolayers as High-Capacity Nodal-Line Semimetal Anodes for Na-Ion Batteries: A DFT Study. ACS Omega, 10(9), 9301-9313(2025).
57. H. Xie, X. Lv, Z. Mo, J. Gong, X. Gao, Z. Li , J. Wu , J. Shen. Tailoring the cryogenic magnetism and magnetocaloric effect from Zr substitution in EuTiO3 perovskite. Journal of Materials Science & Technology, 193, 90-97(2024).
56. S. S. Liu, H. S. Zhang*, F. J. Kang, Z. Peng, S. Q. Guo, J. Lyu, J. Gong*. Identification and Passivation of D-Center in 4H-SiC: A First-Principles Study. Annalen der Physik, 2400317(2024).
55. S. Song, L. Qin, Z. Wang, J. Lyu, J. Gong*, S. Yang*. Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects. Nanomaterials, 14(23), 1960(2024).
54. Q. J. Wang, H. S. Zhang*, L. Shi, Y. H. Cheng, J. Gong*. Regulation of CN-related optical transitions and non-radiative capture cross-section by biaxial strain in AlN. Physics Letters A, 528, 130034(2024).
53. R. Yue, X. Su, X. Lv*, B. Zhang, S. Su, H. Li, S. Guo*, J. Gong*. Room-temperature ferromagnetism, half-metallicity and spin transport in monolayer CrSc2Te4-based magnetic tunnel junction devices. Physical Chemistry Chemical Physics, 26(28), 19207-19216(2024).
52. S. Lang, S. Song, J. Lyu*, J. Gong*. Device Transport Characteristics of Monolayer SnS2 and HfS2 Field-Effect Transistors with Semimetal Contacts. Journal of Physical Chemistry C, 128(34), 14458-14468(2024).
51. S. Song, J. Lyu, L. Qin, Z. Wang, J. Gong*, S. Yang*. Lateral graphene/MoS2 heterostructures for steep-slope Dirac-source field-effect transistors. Physical Review B, 110(12), 125407(2024).
50. Z. Zhao, T. Xiong, J. Gong*, Y. Y. Liu*. Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs. Nanomaterials, 14(12), 1038(2024).
49. L. He, S. Lang, W. Zhang, S. Song, J. Lyu*, J. Gong*. First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor. Nanomaterials, 14(7), 612(2024).
48. Q. J. Wang, H. S. Zhang*, L. Shi, J. Gong*. Origin of Ga vacancy-related YL center in n-type GaN: A first-principles study. Journal of Luminescence, 225, 119561(2023).
47. J. Lyu, J. Gong*, H. Li*. Harnessing defects for high-performance MoS2 tunneling field-effect transistors. Materials Research Letters, 11(4), 266-273(2023).
46. J. Lyu, S. Song, J. Gong*. Bi2O2Se/Xene for Steep-Slope Transistors. ACS Applied Electronic Materials, 5(8), 4248-4253(2023).
45. J. Jyu, J. Gong*. Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism. Nanomaterials, 13(4), 649(2023).
44. Y. Dong, J. Li, F. Li, and J. Gong*, DFT Investigations on the Boron–Phosphorus Assembled Nanowires, Journal of Cluster Science, 2022, 33, 2157.
43. H. S. Zhang, J. Gong*, and L. Shi*, “Antisite Defect SiC as a Source of the DI Center in 4H-SiC”, Physica Status Solidi– Rapid Research Letters, 2022, 2200239.
42. R. Y. Wang, J. Lyu,* J. Gong* Strain Benefits of monolayer α-GeTe and its application in low-power metal-oxide-semiconductor field-effect transistors. Physica Status Solidi-Rapid Research Letters, 2022, 16, 2200174.
41. S. Song, J. Gong*, S. Y. Yang, et al. Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices, Physical Chemistry Chemical Physics, 2022, 24, 2265.
40. S. Song, J. Gong*, S. Y. Yang, et al. Improving performance of monolayer arsenene tunnel field-effect transistors by defects, Nanoscale Advances, 2022, 4, 3023.
39.Y. N. Dong, S. K. Wang, C. B. Yu, F. Y. Li, J. Gong and J. J. Zhao. First-principles explorations on P-8 and N-2 assembled nanowire and nanosheet. Nano Express, 2(1), 01004(2021).
38.X. D. Lv, L. K. Yu, F. Y. Li, J. Gong, Y. He and Z. F. Chen. Penta-MS2 (M = Mn, Ni, Cu/Ag and Zn/Cd) monolayers with negative Poisson's ratios and tunable bandgaps as water-splitting photocatalysts. Journal of Materials Chemistry A, 9(11), 6993–7004 (2021).
37.Y. N. Dong, B. Xu, H. Y. Hu, J. S. Yang, F. Y. Li, J. Gong and Z. F. Chen. C9N4 and C2N6S3 monolayers as promising anchoring materials for lithium-sulfur batteries: weakening the shuttle effect via optimizing lithium bonds. Physical Chemistry Chemical Physics, 23(23), 12958-12967(2021)
36.Y. N. Dong, X.D. Lv, L. K. Yu, F. Y. Li and J. Gong. Two-dimensional phosphorus-based binary nanosheets for photocatalyzing water splitting: A first-principles study. Chemical Physics Letters, 772, 138594(2021).
35.Y. N. Dong, J. Li, F. Y. Li and J Gong. DFT Investigations on the Boron-Phosphorus Assembled Nanowires. Journal of Cluster Science, (2021).
34.S. C. Yan, J. Gong. Impact of uniaxial strain on the electronic and transport properties of monolayer alpha-GeTe. Nanotechnology, 31(44), 445706(2020).
33. Q. Liu, F. Y. Li, J Gong. Theoretical Investigations on the Nanowires Assembled by the V-1@Si-12 Clusters. Journal of Cluster Science, 31(3), 637-642(2020).
32. X. D. Lv, F. Y. Li, J. Gong. Metallic FeSe monolayer as an anode material for Li and non-Li ion batteries: a DFT study. Physical Chemistry Chemical Physics, 22(16), 8902-8912(2020).
31. S. L. Su, J. Gong, Z. Q. Fan. Selective adsorption of harmful molecules on zigzag phosphorene nanoribbon for sensing applications. Physica E-low-dimensional systems & nanostructures, 117, 113838 (2020).
30. F. Y. Li, X. D. Lv, J. X. Gu, K. X. Tu, J. Gong, P. Jin and Z. F. Chen. Semiconducting SN2 monolayer with three-dimensional auxetic properties: a global minimum with tetracoordinated sulfurs. NANOSCALE, 12(1), 85-92, (2020).
29. J. Lu, P. Jing, Y. Z. Guo, J. Gong and H. L. Li. A New Opportunity for 2D van der Waals Heterostructures: Making Steep-Slope Transistors. ADVANCED MATERIALS, 32(2), 1906000(2020).
28. Su, SL ; Gong, J ; Fan, ZQ,Tunnable rectifying performance of in-plane metal-semiconductor junctions based on passivated zigzag phosphorene nanoribbons，RSC ADVANCES 8（55）31255-31260，（2018）
27. Lv X. D ; Li F. Y. , Gong J ; Chen Z. F. ，The dimensional and hydrogenating effect on the electronic properties of ZnSe nanomaterials: a computational investigation，Physical Chemistry Chemical Physics，20（37） 24453-24464，（2018）
26. Lu, J (Lu, Juan); Fan, ZQ (Fan, Zhi-Qiang); Gong, J (Gong, Jian); Chen, JZ (Chen, Jie-Zhi) ; ManduLa, H (ManduLa, Huhe) ; Zhang, YY(Zhang, Yan-Yang); Yang, SY (Yang, Shen-Yuan) ; Jiang, XW (Jiang, Xiang-Wei), et al. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects, Physical Chemistry Chemical Physics, 20(8), 5699(2018).
25. Lu, J; Fan, ZQ ; Gong, J ; Jiang, XW ,Ab initio simulation study of defect assisted Zener tunneling in GaAs diode, AIP ADVANCES, 7(6),065302, JUN 2017.
24. Lu, J; Fan, ZQ ; Gong, J ; Jiang, XW, Ab initio performance predictions of single-layer In-V tunnel field-effect transistors, Physical Chemistry Chemical Physics, 19(30): 20121-20126, AUG 14 2017
23. Chen, J; Gong, J, Theoretical investigation of the phonon-assisted tunneling in TFET with an indirect band gap semiconductor, SUPERLATTICES AND MICROSTRUCTURES 111, 319-325(2017)
22. X. W. Jiang, J. Lu, J. W. Luo, S. S. Li, J. Gong and L. W. Wang. Ab initio simulation on mono-layer MoS2 tunnel FET: Impact of metal contact configuration and defect assisted tunneling. IEEE International Conference on Solid-State and Integrated Circuit Technology, 486 (2016).
21．M. Li, J. Chen, and J. Gong(宫箭), Dwell time and escape tunneling in InAs/InP cylindrical quantum wire, Acta Phys. Sin., 63, 237303 (2014.12).
20．X. W. Jiang, J. Gong, N. Xu, S. S. Li, J. F. Zhang, Y. Hao, and L. W. Wang, Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects, Appl. Phys. Lett., 104, 023512, 2014.1.
19. R. Q. Wang, J. Gong*, J. Y. Wu, and J. Chen, Time of spin-polarized tunneling through a symmetric double-barrier quantum well structure, Acta Phys. Sin., 62,087303, 2013.4.
18. Yue Hai-Di, Zhang Yong, Gong Jian, Quantum discord in three-spin XXZ chain with three-spin interaction. SCIENCE CHINA Physics, Mechanics & Astronomy V55,No.9：1641-1645（2012.9）
17. Y. Ming, J. Gong(通讯作者), and R. Q. Zhang, Spin-polarized transport through ZnMnSe/ZnSe/ZnBeSe heterostructures, J. Appl. Phys. 110, 093717,2011.11.(SCI) IF: 2.079
16. Hui Li, Jian Gong, Xing Hu, and Rui-Qin Zhang, Barrier dependent electron tunneling lifetime in one-dimensional device structures, JOURNAL OF APPLIED PHYSICS 108, 104514 _2010.11
15. 那顺乌日图，宫箭，强激光场下非对称量子阱中子带间的跃迁，光电子激光，21（7），1102，2010.
14. 杨明,宫箭,李贺年,李硕，Ⅱ-Ⅵ族稀磁半导体多层结构中的自旋极化隧穿，发光学报 ，2010年第31卷第4期 pp.515-520
13. J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted magnetotunneling in a parabolic quantum well with double barriers，Physica E, 40(8), 2664-2670, 2008.6.
12. F. Q. Zhao and J Gong, Influence of electric field on the binding energy of hydrogenic impurity with spatially dependent mass in nitride parabolic quantum wells, MODERN PHYSICS LETTERS B,21(5), 279, 2007.2.
11. J. Gong, X. X. Liang and S. L. Ban, Tunneling Time of Electronic Wave Packet through a Parabolic Quantum Well with Double Barrier, Phys Status Solidi (b), 244(6), 2064-2071, (2007).JUN 2007
10. F. Q. Zhao and J Gong, Energy of a polaron in a wurtzite nitride finite parabolic quantum well, Chin. Phys. Lett., 24(5), 1327, 2007.5.
9. J. Gong, F. H. Yang and S. L. Feng, Coherent tunneling in coupled quantum wells under a uniform magnetic field, Chin. Phys. Lett., 24(8), 2383, 2007.AUG 2007
8. J. Gong, X. X. Liang and S. L. Ban, Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure, J. Appl. Phys. 102(7), 0737182007.OCT 1 2007
7. J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon assisted tunneling in a parabolic quantum well with double barriers, J. Appl. Phys. 100(2), 023707, 2006.7.
6. 宫箭、梁希侠，班士良, GaAs-AlGaAs双势垒结构中电子共振隧穿寿命，半导体学报，V26，（10），2005，183-187 J. Gong, X. X. Liang and S. L. Ban, Electron tunneling lifetime through a GaAs-AlGaAs double barriers heterostructure, Chinese Journal of Semiconductors, 26(10), 183-187, 2005.
5. J. Gong, X. X. Liang, S. L. Ban, Resonant tunneling parabolic quantum well structures under a uniform transverse magnetic field，Chinese Physics,V14,（1）,2005,201-207
4. J. Gong, S. L. Ban, X. X. Liang Resonant tunneling in simiconductor multibarrier heterstructures，International Journal of Modern Physics B, V16, （30）, 2002.11, 4607-4619
3. 宫箭、班士良，电子横向运动对共振隧穿的影响，发光学报，2001, 22(1)，33-35
2. 宫箭、班士良，Zn1-xCdxSe/ZnSe 异质结系统的施主能级，内蒙古大学学报（自然科学版）2000年9月第31卷第5期482-486
1. 宫箭、班士良, Zn1-xCdxSe/ZnSe 异质结中的界面极化子, 内蒙古大学学报（自然科学版）2000年7月第31卷（4），364-369
