已发表论文 (*通讯作者)
[1] Jian-Jie Kang, Hai-Shan Zhang*. Revealing the Divergence in Nonradiative Recombination Dynamics of Deep-Level Defects in CsGeBr3: Intrinsic Tolerance of Br Vacancies versus Strain-Induced Passivation of CsBr Antisites. The Journal of Physical Chemistry Letters, 2026, 17(8), 2271-2279.
[2] Jian-Jie Kang, Fang-Jing Kang, Shuai-Shuai, Ze Peng, Yun-Hua Cheng*, Hai-Shan Zhang*. The impact of IGe defects on the photovoltaic performance of CsGeI3: A DFT and NAMD study. Solar Energy Materials and Solar Cells, 2026, 295, 113988.
[3] Jian-Jie Kang, Fang-Jing Kang, Shuai-Shuai, Ze Peng, Jia-Wei Wu, Shao-Qiang Guo, Juan Lyu, Jian Gong, Hai-Shan Zhang*, Enhancing photovoltaic performance of MoS2/SiC heterojunctions: Extending carrier lifetime and suppressing sulfur-vacancy defects via Type-II band alignment and strain engineering, Solar Energy Materials and Solar Cells, 2026, 301, 114323
[4] Fang-Jing Kang, Shuai-Shuai Liu, Jian-Jie Kang, Ze Peng, Shao-Qiang Guo, Juan Lyu, Hai-Shan Zhang*, Jian Gong*, Sulfur Passivation Engineering of Carbon Defects in N-Surface GaN: Suppressing Nonadiabatic Carrier Recombination Via Self-Compensated SN-CN Complexes. The Journal of Physical Chemistry Letters, 2025, 16 (24), 5938-5945.
[5] Qian-Ji Wang, Hao-Rui He, Fang-Jing Kang, Ze Peng, Lin Shi, Shao-Qiang Guo, Juan Lyu, Hai-Shan Zhang*, Jian Gong*, First-Principles Calculations of Stability, Optical Properties, and Non-Radiative Hole Capture Rates of Carbon Defects in Wurtzite AlGaN Alloys. Chinese Physics B (Accepted Manuscript online 21 October 2025, DOI 10.1088/1674-1056/ae156a).
[6] Y. S. Zhao, Y. X. Zhang, H. S Zhang, J. Lyu, J. Gong, S. Q. Guo, Modulation of spin transport in CrBr3|WS2|CrBr3 magnetic tunnel junctions via point defects, Journal of Magnetism and Magnetic Materials, 2026, 641, 173837
[7] Y. X. Zhang, W. T. Lin, H. S. Zhang, J. Lyu, J. Gong, S. Q. Guo, Spin orbit coupling modulated tunneling magnetoresistance in MnBr2-based antiferromagnetic magnetic tunnel junctions, Physica B: Condensed Matter, 2026, 724, 418204
[8] K. Shi, S. Lang, S. Song, S. Q. Guo, H. S. Zhang, J. Lyu, J. Gong, Thermionic emission-dominated sub-60 mV dec-1 operation in BSb/CNT van der Waals heterostructure transistors, New Journal of Physics, 2025, 27 (9), 093503
[9] S. Lang, W. Zhang, S. Song, S. Q. Guo, H. S. Zhang, J. Lyu, J. Gong, High-Performance Monolayer 1T-GeO2 Transistors with Low-Resistance Metal Contacts, Advanced Electronic Materials, 2025, 11 (19),
[10] S. Lang, S. Q. Guo, H. S. Zhang, J. Lyu, J. Gong, Monolayer BX (X = P, As, Sb): Emerging High-Performance Channel Materials for Advanced Transistors, Advanced Electronic Materials, 2025, 11 (18), e00220
[11] Y. K. Niu, Y. Ni, H. S. Zhang, L. Qiu, J. L. Wang, L. M. Chen, Y. Song, S. P. Feng, Quantitative determination of the orbital-selective Mott transition and quantum entanglement in the orbital-selective Mott phase, Physical Review B, 2024, 110 (4), 045131
[12] Shuai-Shuai Liu, H. S. Zhang*, Fang-Jing Kang, Ze Peng, Shao-Qiang Guo, Juan Lyu, and Jian Gong*. Identification and Passivation of D-Center in 4H-SiC: A First-Principles Study. Annalen der Physik, 2024, 2400317.
[13] Qian-Ji Wang, H. S. Zhang*, Lin Shi, Yun-Hua Cheng, Jian Gong. Regulation of CN-related optical transitions and non-radiative capture cross-section by biaxial strain in AlN. Physics Letters A, 2024, 528: 130034.
[14] Q. J. Wang, H. S. Zhang,* L. Shi, and J. Gong.* Origin of Ga vacancy-related
YL center in n-type GaN: A first-principles study. Journal of Luminescence, 2023, 255, 119561.
[15] H. S. Zhang, L. Shi.* Z. H. Liu, G. Z. Xu, W. T. Song, Y. K. Wang, Z. J. Xu, X. B. Yang, Y. J. Zhao, X. L. Yang, B. Shen, L. W. Wang,* and K. Xu.* Theoretical simulation and experimental verification of the competition between different recombination channels in GaN semiconductors. Journal of Materials Chemistry C, 2022, 10(36), 13191.
[16] H. S. Zhang, J. Gong,* and L. Shi.* Antisite Defect SiC as a Source of the DI Center in 4H-SiC. Physica Status Solidi–Rapid Research Letters, 2023, 17, 2200239
[17] S. Wu, X. L Yang,* H. S. Zhang, L. Shi, Q. Zhang, Q. Shang, Z. Qi, Y. Xu, J. Zhang, N. Tang, X. Wang, W. Ge, K. Xu, and B. Shen.* Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN. Physical Review Letters, 2018, 121(14), 145505.
[18] H. S. Zhang, L. Shi,* X. B. Yang, Y. J. Zhao, K. Xu, and L. W. Wang.* First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: CN+ON and GaN:CN. Advanced Optical Materials, 2017, 5(21), 1700404.
[19] H. S. Zhang, F. Kang, Y. J. Zhao, M. Peng, D. Y. Lei, and X. B. Yang.* The role of oxygen defects in a bismuth doped ScVO4 matrix: tuning luminescence by hydrogen treatment. Journal of Materials Chemistry C, 2017, 5(2), 314.
[20] Tingting Shi,* H. S. Zhang, Weiwei Meng, Qiang Teng, Meiyue Liu, Xiaobao Yang, Yanfa Yan, Hin-Lap Yip* and Yu-Jun Zhao.* Effects of Organic Cations on the Defect Physics of Tin Halide Perovskites. Journal of Materials Chemistry A, 2017, 5, 15124
[21] Yun-Peng Wang, H. S. Zhang, Li-Ting Lin, Shi-Feng Zhou, Yao Yao, Xiao-Bao Yang, and Yu-Jun Zhao.* Role of intrinsic defects on the persistent luminescence of pristine and Mn doped ZnGa2O4. Journal of Applied Physics, 2019, 125, 095701.
[22] Fengwen Kang, H. S. Zhang, Lothar Wondraczek, Xiaobao Yang, Yi Zhang, Dang Yuan Lei, and Mingying Peng.* Band-Gap Modulation in Single Bi3+-Doped Yttrium−Scandium−Niobium Vanadates for Color Tuning over the Whole Visible Spectrum. Chemistry of Materials, 2016, 28, 2692−2703
[23] Qianyi Guo, Yuanhao Zhang, H. S. Zhang, Yingjun Liu, Yu-Jun Zhao, Jianrong Qiu, and Guoping Dong. 3D Foam Strutted Graphene Carbon Nitride with Highly Stable Optoelectronic Properties. Advanced Functional Materials, 2017, 1703711
