个人简介

教育情况

2017.09-2022.06  

内蒙古大学 物理科学与技术学院 凝聚态物理学 理学博士（硕博连读）

（2018.12-2022.01于中国科学院半导体研究所联合培养）

2013.09-2017.06  

内蒙古民族大学 物理与电子信息学院 应用物理学 理学学士

工作经历

2025.06至今

内蒙古大学 物理科学与技术学院 副研究员 硕士生导师

2022.08-2025.05

中国科学院半导体研究所 半导体芯片物理与技术全国重点实验室  博士后

教学

1.本科生《半导体光电器件》

2.研究生《第一性原理计算》

培养研究生情况

目前协助指导博士生1名、硕士生1名；每年计划招收硕士研究生1-2名。

欢迎积极上进、开朗务实，对计算半导体物理感兴趣的同学加入

目前主持的科研项目

内蒙古大学高层次人才科研启动项目，主持，2026.01—2029.01

主要论著

学术论文：

1. Shun Song*, Lu Qin, Juan Lyu, Zhi Wang, Jian Gong*, and Shenyuan Yang*. Spin-sensitive multifunctional devices based on lateral graphene/MoS₂ heterostructures[J]. InfoMat, 2026, 8(e70111). (中国科学院一区Top期刊，IF: 22.3)

2. Shun Song, Juan Lyu, Lu Qin, Zhi Wang, Jian Gong*, and Shenyuan Yang*. Lateral graphene/MoS₂ heterostructures for steep-slope Dirac-source field-effect transistors[J]. Physical Review B, 2024, 110 (125407). (学科卓越期刊)

3. Lu Qin, Juan Lyu, Shenyuan Yang*, Shun Song*, and Jian Gong*. Engineering SnSe Isolated State Steep-Slope MOSFETs for High-Performance Applications[J]. Advanced Electronic Materials, 2025, 11 (e00573). (学科一流期刊，工作入选Editor’s Choice)

4. Shun Song, Lu Qin, Zhi Wang, Juan Lyu, Jian Gong*, and Shenyuan Yang*. Improving the performance of arsenene nanoribbon gate-all-around tunnel field-effect transistors using H defects[J]. Nanomaterials, 2024, 14 (1960).

5. Shun Song, Jian Gong*, Xiangwei Jiang, and Shenyuan Yang*. Influence of the interface structure and strain on the rectification performance of lateral MoS2/ graphene heterostructure devices[J]. Physical Chemistry Chemical Physics, 2022, 24 (2265-2274).

6. Shun Song, Jian Gong*, Hongyu Wen, and Shenyuan Yang*. Improving performance of monolayer arsenene tunnel field-effect transistors by defects[J]. Nanoscale Advances, 2022, 4 (3023).

7. Shuai Lang, Shun Song,Juan Lyu*, and Jian Gong*. Device transport characteristics of monolayer SnS2 and HfS2 field-effect transistors with semimetal contacts[J]. The Journal of Physical Chemistry C, 2024, 128 (14458-14468).

8. Juan Lyu, Shun Song,and Jian Gong*. Bi₂O₂Se/Xene for steep-slope transistors[J]. ACS Applied Electronic Materials, 2023, 5 (4248-4253).

9. Juan Lyu, Shuai Lang, Ni Dong, Shun Song, Jian Gong*, and Huanglong Li*. Resistive-switching properties of monolayer 1-HfO₂ atomristors with different metal electrodes[J]. Physical Review Applied, 2025, 23 (044035).

10. Kai Shi, Shuai Lang, Shun Song,Shaoqiang Guo, Haishan Zhang, Juan Lyu*, Jian Gong*. Thermionic emission-dominated sub-60 mV/dec. operation in BSb/CNT van der Waals heterostructure transistors. New Journal of Physics, 2025, 27, (093503).

11. Shuai Lang, Wei Zhang, Shun Song,Shaoqiang Guo, Haishan Zhang, Juan Lyu*, Jian Gong*. High-Performance Monolayer 1T-GeO₂ Transistors with Low-Resistance Metal Contacts. Advanced Electronic Materials, 2025, e00407.

12. Lulu Wang, Shenyuan Yang, Yaqi Gao, Jiankun Yang, Yiwei Duo, Shun Song,Jianchang Yan, Junxi Wang, Jinmin Li, Tongbo Wei*. Quasi-van der Waals epitaxy of a stress-released AlN film on thermally annealed hexagonal BN for deep ultraviolet light-emitting diodes[J]. ACS Applied Materials & Interfaces, 2023, 15 (23501-23511).

中国发明专利：

1. 杨身园，宋顺（导师外第一发明人），宫箭，“整流器”，专利号：ZL202110822011.8（已获授权）

2. 宋顺，杨身园，秦璐，宫箭，“一种环形栅场效应晶体管”，专利申请号：202410223196.4（实质审查阶段）

3. 宋顺，杨身园，秦璐，宫箭，“可快速开关的狄拉克源极器件”，专利申请号：202211591511.6（实质审查阶段）