张海山

2016-07-08 文字：点击：[]

姓名：张海山

职称：副教授硕士生导师

内蒙古大学物理科学与技术学院

Email: hszhang@imu.edu.cn

教育工作经历

2014.09-2019.06 华南理工大学物理电子学博士（硕博连读）

2017.02-2019.01 中国科学院苏州纳米技术与纳米仿生研究所访问学习

2019.07-2022.12 内蒙古大学物理科学与技术学院讲师

2023.01-至今内蒙古大学物理科学与技术学院副教授

教学

承担本科生《大学物理》、《大学物理实验》、《数学物理方法》教学工作

培养研究生情况

每年拟在物理学（学硕）/光电信息工程（专硕）专业各招收1~2名硕士研究生，欢迎热爱物理、勤奋努力的学生报考

研究兴趣

半导体以及新能源材料的缺陷与掺杂理论研究

主持科研项目

1. 内蒙古自治区自然科学基金,资助号2024MS01010,起止时间：2024.01-2026.12

2. 国家自然科学基金,资助号12004204,起止时间：2021.01-2023.12

3. 内蒙古自治区自然科学基金，资助号2020BS01003，起止时间：2020.07-2022.12

4. 内蒙古大学高层次人才科研启动基金,起止时间：2020.01-2022.12

代表性论文 (*通讯作者)

[1] Shuai-Shuai Liu, H. S. Zhang^*, Fang-Jing Kang, Ze Peng, Shao-Qiang Guo, Juan Lyu, and Jian Gong*. Identification and Passivation of D-Center in 4H-SiC: A First-Principles Study. Annalen der Physik, 2024, 2400317.

[2] Qian-Ji Wang, H. S. Zhang^*, Lin Shi, Yun-Hua Cheng, Jian Gong. Regulation of C_N-related optical transitions and non-radiative capture cross-section by biaxial strain in AlN. Physics Letters A, 2024, 528: 130034.

[3] Q. J. Wang, H. S. Zhang,* L. Shi, and J. Gong.* Origin of Ga vacancy-related YL center in n-type GaN: A first-principles study. Journal of Luminescence, 2023, 255, 119561.

[4] H. S. Zhang, L. Shi.* Z. H. Liu, G. Z. Xu, W. T. Song, Y. K. Wang, Z. J. Xu, X. B. Yang, Y. J. Zhao, X. L. Yang, B. Shen, L. W. Wang,* and K. Xu.* Theoretical simulation and experimental verification of the competition between different recombination channels in GaN semiconductors. Journal of Materials Chemistry C, 2022, 10(36), 13191.

[5] H. S. Zhang, J. Gong,* and L. Shi.* Antisite Defect Si_C as a Source of the D_I Center in 4H-SiC. Physica Status Solidi–Rapid Research Letters, 2023, 17, 2200239

[6] S. Wu, X. L Yang,* H. S. Zhang, L. Shi, Q. Zhang, Q. Shang, Z. Qi, Y. Xu, J. Zhang, N. Tang, X. Wang, W. Ge, K. Xu, and B. Shen.* Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN. Physical Review Letters, 2018, 121(14), 145505.

[7] H. S. Zhang, L. Shi,* X. B. Yang, Y. J. Zhao, K. Xu, and L. W. Wang.* First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C_N+O_N and GaN:C_N. Advanced Optical Materials, 2017, 5(21), 1700404.

[8] H. S. Zhang, F. Kang, Y. J. Zhao, M. Peng, D. Y. Lei, and X. B. Yang.* The role of oxygen defects in a bismuth doped ScVO₄ matrix: tuning luminescence by hydrogen treatment. Journal of Materials Chemistry C, 2017, 5(2), 314.

[9] Tingting Shi,* H. S. Zhang, Weiwei Meng, Qiang Teng, Meiyue Liu, Xiaobao Yang, Yanfa Yan, Hin-Lap Yip* and Yu-Jun Zhao.* Effects of Organic Cations on the Defect Physics of Tin Halide Perovskites. Journal of Materials Chemistry A, 2017, 5, 15124

[10] Yun-Peng Wang, H. S. Zhang, Li-Ting Lin, Shi-Feng Zhou, Yao Yao, Xiao-Bao Yang, and Yu-Jun Zhao.* Role of intrinsic defects on the persistent luminescence of pristine and Mn doped ZnGa₂O₄_.Journal of Applied Physics, 2019, 125, 095701.

[11] Fengwen Kang, H. S. Zhang, Lothar Wondraczek, Xiaobao Yang, Yi Zhang, Dang Yuan Lei, and Mingying Peng.* Band-Gap Modulation in Single Bi³⁺-Doped Yttrium−Scandium−Niobium Vanadates for Color Tuning over the Whole Visible Spectrum. Chemistry of Materials, 2016, 28, 2692−2703

[12] Qianyi Guo, Yuanhao Zhang, H. S. Zhang, Yingjun Liu, Yu-Jun Zhao, Jianrong Qiu, and Guoping Dong. 3D Foam Strutted Graphene Carbon Nitride with Highly Stable Optoelectronic Properties. Advanced Functional Materials, 2017, 1703711

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